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Transport of heavily boron-doped synthetic semiconductor diamond in the hopping regime

✍ Scribed by Sato, Toshimaro; Ohashi, Kazutoshi; Sugai, Hiroyuki; Sumi, Takashi; Haruna, Katsuji; Maeta, Hiroshi; Matsumoto, Norimasa; Otsuka, Hideo

No coin nor oath required. For personal study only.

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