Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties

✍ Scribed by Hamid Bentarzi (auth.)

• Publisher: Springer-Verlag Berlin Heidelberg
• Year: 2011
• Tongue: English
• Leaves: 119
• Series: Engineering Materials
• Edition: 1
• Category: Library

✦ Synopsis

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

✦ Table of Contents

Front Matter....Pages i-xiii
Introduction....Pages 1-4
The MOS Structure....Pages 5-16
The MOS Oxide and Its Defects....Pages 17-28
Review of Transport Mechanism in Thin Oxides of MOS Devices....Pages 29-37
Experimental Techniques....Pages 39-58
Theoretical Approaches of Mobile Ions Density Distribution Determination....Pages 59-82
Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide....Pages 83-102
Back Matter....Pages 103-104

✦ Subjects

Optical and Electronic Materials;Semiconductors;Characterization and Evaluation of Materials;Solid State Physics