Transport in a p-type CdBxF2−x quantum well on an n-type CdF2 surface
✍ Scribed by Nikolay T. Bagraev; Maria I. Bovt; Olga N. Guimbitskaya; Leonid E. Klyachkin; Anna M. Malyarenko; Vladimir V. Romanov; Alexander I. Ryskin; Alexander S. Shcheulin
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 383 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
The current-voltage measurements and tunnelling spectroscopy are used to study the ballistic transport of the spin-polarized holes by varying the value of the Rashba spin-orbit interaction (SOI) in the p-type nanostructures prepared on the surface of the n-CdF 2 /YSbulk crystal. The findings of the hole conductance oscillations in the plane of the p-type nanostructures that are due to the variations of the Rashba SOI are shown to be evidence of the spin transistor effect, with the amplitude of the oscillations close to e 2 /h.