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Transport Coefficients of Ag–SiO2Plasmas

✍ Scribed by Pascal André; William Bussière; David Rochette


Publisher
Springer
Year
2007
Tongue
English
Weight
753 KB
Volume
27
Category
Article
ISSN
0272-4324

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Transport properties of double-gate SiO2
✍ Prunnila, Mika ;Ahopelto, Jouni ;Sakaki, Hiroyuki 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 572 KB

## Abstract We report on fabrication and low temperature transport properties of double‐gate SiO~2~–Si–SiO~2~ quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport