## Abstract Measurements of the electron transport properties in In__~x~__ Ga~1β__x__~ As (__x__ Β =Β 0.2 and __x__ Β =Β 0.3) channel heterostructures have consistently shown the transport mobility to be higher in the [01&1macr;] direction compared to [011] on a (100) wafer. Low temperature (1.6Β K) mea
Transport anisotropy in InGaAs 2D electron gases
β Scribed by M. Rosini; E. Cancellieri; D. Ercolani; G. Biasiol; C. Jacoboni; L. Sorba
- Book ID
- 104085108
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 273 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1386-9477
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