Transport and level anticrossing in strongly coupled double quantum wells with in-plane magnetic fields
β Scribed by Lyo, S. K.
- Book ID
- 121875972
- Publisher
- The American Physical Society
- Year
- 1994
- Tongue
- English
- Weight
- 198 KB
- Volume
- 50
- Category
- Article
- ISSN
- 1098-0121
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π SIMILAR VOLUMES
We investigate Landau level formation in closely coupled double quantum wells by measuring the longitudinal resistance (R ) as a function of both perpendicular (B , ) and in-plane (B , ) magnetic fields. B , distorts the dispersion curve resulting in a continuously tunable, non-parabolic, two-compon
We studied the optical properties of GaAs/Al 0X35 Ga 0X65 As asymmetric double quantum wells at T 4X2 K and in the presence of in-plane magnetic fields up to 20 T. In an electric field F 8 45 kV/cm, electrons and holes are respectively confined in the wide and narrow well and form spatially indirect