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Transmission electron microscopy observation of GaAs/Al0.3Ga0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs(100) reverse-mesa etched substrates

✍ Scribed by M. Tanaka; N. Tomita; T. Higuchi; S. Shimomura; A. Adachi; N. Sano; S. Hiyamizu


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
502 KB
Volume
150
Category
Article
ISSN
0022-0248

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