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Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy

✍ Scribed by Romero, O.S.; Aragon, A.A.; Rahimi, N.; Shima, D.; Addamane, S.; Rotter, T.J.; Mukherjee, S. D.; Dawson, L.R.; Lester, L.F.; Balakrishnan, G.


Book ID
125373863
Publisher
Springer US
Year
2014
Tongue
English
Weight
860 KB
Volume
43
Category
Article
ISSN
0361-5235

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