Transitions in highly ionized silicon

✍ Scribed by R. Glass

• Publisher: Springer
• Year: 1982
• Tongue: English
• Weight: 489 KB
• Volume: 80
• Category: Article
• ISSN: 0038-0938
• DOI: 10.1007/bf00147979

✦ Synopsis

Configuration interaction wavefunctions are used to calculate energy levels, wavelengths, oscillator strengths, line strengths, transition probabilities, lifetimes and branching ratios for absorption transitions between the 21nl' [n = 2, 3; l' >-l] states for Si xI. Comparison with recent beam-foil experimental data for the 2s2p ipo, 2p2 ~D and 2p 2 1S states is generally good, though in some cases cascade effects may be larger than had been expected.