✦ LIBER ✦

Transition between grain boundary and intragrain scattering transport mechanisms in boron-doped zinc oxide thin films

✍ Scribed by Steinhauser, J.; Faÿ, S.; Oliveira, N.; Vallat-Sauvain, E.; Ballif, C.

Book ID: 121797060
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 356 KB
Volume: 90
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2719158

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical transport in boron-doped poly

Electrical transport in boron-doped polycrystalline zinc oxide thin films

✍ Steinhauser, J. ;Faÿ, S. ;Oliveira, N. ;Vallat-Sauvain, E. ;Zimin, D. ;Kroll, U. 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 323 KB

## Abstract Boron doped Zinc oxide (ZnO:B) thin films are commonly used as transparent conductive oxide (TCO) in thin film silicon solar cells. TCO films with a high electrical conductivity combined with a high transparency are required for this application. In this paper, the electronic transport

Disorder induced semiconductor to metal

Disorder induced semiconductor to metal transition and modifications of grain boundaries in nanocrystalline zinc oxide thin film

✍ Singh, Fouran; Chaudhary, Babloo; Kumar, Vinod; Singh, R. G.; Kumar, Sanjeev; Ka 📂 Article 📅 2012 🏛 American Institute of Physics 🌐 English ⚖ 831 KB