Transistor Level Modeling for Analog RF IC Design

✍ Scribed by Grabinski, Wladyslaw; Nauwelaers, Bart; Schreurs, Dominique (Editors)

Publisher: Springer
Year: 2006
Tongue: English
Leaves: 297
Edition: 1
Category: Library

No coin nor oath required. For personal study only.

✦ Synopsis

The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

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