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Transformations of the stepped Si(001) surface structure induced by heating the specimen by a current

โœ Scribed by L.V. Litvin; A.B. Krasilnikov; A.V. Latyshev

Publisher
Elsevier Science
Year
1991
Weight
597 KB
Volume
244
Category
Article
ISSN
0167-2584

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Germanium is a suitable material as the buffer layer for the heteroepitaxial growth of InSb films on a Si 001 substrate. It reduces the large lattice mismatch of about 19.3% between Si and InSb to about 14.5%. InSb films grown on the islanded ลฝ . ยฒ : Ge buffer layers on a Si 001 substrate at elevat