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Transferable tight-binding parametrization for the group-III nitrides

✍ Scribed by Jancu, J.-M.; Bassani, F.; Sala, F. Della; Scholz, R.


Book ID
118043913
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
355 KB
Volume
81
Category
Article
ISSN
0003-6951

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## Abstract Two slightly different, efficient tight‐binding (TB) models for the description of the electronic properties of nitride‐based semiconductor quantum dots (QDs) have been developed and applied to the calculation of the electronic one‐particle spectrum of these structures. Using these one‐