We describe photoluminescence measurements made on mesa geometry quantum dots and wires with exposed side walls fabricated by laterally patterning undoped GaAs/A1GaAs quantum wells using electron beam lithography and dry etching. At low temperature the photoluminescence efficiency of many but not al
โฆ LIBER โฆ
Toward quantum well wires: Fabrication and optical properties
โ Scribed by Petroff, P. M.
- Book ID
- 120601680
- Publisher
- American Institute of Physics
- Year
- 1982
- Tongue
- English
- Weight
- 537 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.93610
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