✦ LIBER ✦
Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 μm SiGe BiCMOS technology
✍ Scribed by Guofu Niu, ; Mathew, S.J.; Banerjee, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Subbanna, S.
- Book ID
- 123617638
- Publisher
- IEEE
- Year
- 1999
- Tongue
- English
- Weight
- 647 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0018-9499
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