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Topological Insulators: Dirac Equation in Condensed Matters

โœ Scribed by Shun-Qing Shen


Publisher
Springer
Year
2013
Tongue
English
Leaves
231
Series
Springer Series in Solid-State Sciences
Edition
2013
Category
Library

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โœฆ Synopsis


Topological insulators are insulating in the bulk, but process metallic states present around its boundary owing to the topological origin of the band structure. The metallic edge or surface states are immune to weak disorder or impurities, and robust against the deformation of the system geometry. This book, the first of its kind on topological insulators, presents a unified description of topological insulators from one to three dimensions based on the modified Dirac equation. A series of solutions of the bound states near the boundary are derived, and the existing conditions of these solutions are described. Topological invariants and their applications to a variety of systems from one-dimensional polyacetalene, to two-dimensional quantum spin Hall effect and p-wave superconductors, and three-dimensional topological insulators and superconductors or superfluids are introduced, helping readers to better understand this fascinating new field. This book is intended for researchers and graduate students working in the field of topological insulators and related areas. Shun-Qing Shen is a Professor at the Department of Physics, the University of Hong Kong, China.

โœฆ Subjects


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๐Ÿ“œ SIMILAR VOLUMES


Topological Insulators: Dirac Equation i
โœ Shun-Qing Shen (auth.) ๐Ÿ“‚ Library ๐Ÿ“… 2012 ๐Ÿ› Springer-Verlag Berlin Heidelberg ๐ŸŒ English

<p><p>Topological insulators are insulating in the bulk, but process metallic states present around its boundary owing to the topological origin of the band structure. The metallic edge or surface states are immune to weak disorder or impurities, and robust against the deformation of the system geom

Topological Insulators: Dirac Equation i
โœ Shun-Qing Shen (auth.) ๐Ÿ“‚ Library ๐Ÿ“… 2012 ๐Ÿ› Springer-Verlag Berlin Heidelberg ๐ŸŒ English

<p><p>Topological insulators are insulating in the bulk, but process metallic states present around its boundary owing to the topological origin of the band structure. The metallic edge or surface states are immune to weak disorder or impurities, and robust against the deformation of the system geom

Topological insulators : Dirac equation
โœ Shen, Shun-Qing ๐Ÿ“‚ Library ๐Ÿ“… 2017 ๐Ÿ› Springer ๐ŸŒ English

The first of its kind on the topic, this book presents a unified description of topological insulators in one, two and three dimensions based on the modified Dirac equation. Discusses topological invariants and their applications to a variety of systems.</div> <br> Abstract: <div class="

Topological Insulators: Dirac Equation i
โœ Shen, S.Q. ๐Ÿ“‚ Library ๐Ÿ“… 2013 ๐Ÿ› Springer Berlin Heidelberg ๐ŸŒ English

<p>Topological insulators are insulating in the bulk, but process metallic states present around its boundary owing to the topological origin of the band structure. The metallic edge or surface states are immune to weak disorder or impurities, and robust against the deformation of the system geometr

Topology in Condensed Matter
โœ M. Monastyrsky (auth.), Professor Dr. Michail Ilych Monastyrsky (eds.) ๐Ÿ“‚ Library ๐Ÿ“… 2006 ๐Ÿ› Springer-Verlag Berlin Heidelberg ๐ŸŒ English

<p><P>This book reports new results in condensed matter physics for which topological methods and ideas are important. It considers, on the one hand, recently discovered systems such as carbon nanocrystals and, on the other hand, new topological methods used to describe more traditional systems such

Reshaping of Dirac Cones in Topological
โœ รlvaro Dรญaz Fernรกndez ๐Ÿ“‚ Library ๐Ÿ“… 2021 ๐Ÿ› Springer International Publishing;Springer ๐ŸŒ English

<p><p>Dirac cones are ubiquitous to non-trivial quantum matter and are expected to boost and reshape the field of modern electronics. Particularly relevant examples where these cones arise are topological insulators and graphene. From a fundamental perspective, this thesis proposes schemes towards m