Top contacts for vertical double-gate MOSFETs

✍ Scribed by J Moers; St Trellenkamp; M Goryll; M Marso; A van der Hart; S Hogg; S Mantl; P Kordoš; H Lüth

• Book ID: 104305763
• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 398 KB
• Volume: 64
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(02)00822-5

✦ Synopsis

As scaling of electronic devices goes on, the issue of short channel effects draws growing attention. Double-gate MOSFETs are known to reduce short channel behaviour effectively [Proc. IEEE 85 (1997) 486] and therefore have gained increasing attention for future CMOS application. Here a vertical layout is discussed, where the current flow is perpendicular to the surface. In an already realised layout [Proc. ESSDERC (2001) 191] the device performance is ruled by the resistance of the top contact. In a revised layout the top contact is implemented directly on top of the transistor. Here the layout and the technology steps to obtain this structure are discussed.