To optimize electrical properties of the ultrathin (1.6 nm) nitride/oxide gate stacks with bottom oxide materials and post-deposition treatment

✍ Scribed by Chein-Hao Chen; Yean-Kuen Fang; Chih-Wei Yang; Shyh-Fann Ting; Yong-Shiuan Tsair; Ming-Fang Wang; Tuo-Hong Hou; Mo-Chiun Yu; Shih-Chang Chen; Jang, S.M.; Yu, D.C.H.; Mong-Song Liang

• Book ID: 114538960
• Publisher: IEEE
• Year: 2001
• Tongue: English
• Weight: 192 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.974702