An experimental technique that provides an accurate measure of composition is necessary if we wish to ascertain the effect of indium content on the optical and structural characteristics of InGaN epilayers. Here we compare measurements by photoluminescence (PL) and Rutherford Backscattering Spectrom
โฆ LIBER โฆ
Tip-enhanced photoluminescence mapping of InGaN thin film
โ Scribed by K. Katayama; Y. Ogawa; F. Minami
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 296 KB
- Volume
- 43
- Category
- Article
- ISSN
- 1386-9477
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