Tinkering with the well-tempered MOSFET: source–channel barrier modulation with high-permittivity dielectrics
✍ Scribed by D.L. Kencke; Q. Ouyang; W. Chen; H. Wang; S. Mudanai; A. Tasch; S.K. Banerjee
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 406 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
The introduction of high permittivity (K ) materials in the gate stack can change charge transport dynamics in the standard MOSFET. In this study, device simulation is used to focus on very high permittivity (K = 200) gate insulators and sidewall spacers. Examining both on-and off-state drain current in 50 nm devices, source-side barrier-lowering effects are seen that cause leakage current to rise several orders of magnitude and drive current to vary by ±25%. Asymmetric devices help to distinguish the competing effects when gate dielectric stacks are considered.