✦ LIBER ✦
TiN Metal Gate Electrode Thickness Effect on BTI and Dielectric Breakdown in HfSiON-Based MOSFETs
✍ Scribed by Chien-Liang Chen; Ya-Chin King
- Book ID
- 114620673
- Publisher
- IEEE
- Year
- 2011
- Tongue
- English
- Weight
- 1011 KB
- Volume
- 58
- Category
- Article
- ISSN
- 0018-9383
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