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Time-resolved photoluminescence of GaAs/GaAlAs M.Q.W. structures under picosecond excitation

✍ Scribed by L. Angeloni; A. Chiari; M. Colocci; F. Fermi; M. Gurioli; R. Querzoli; A. Vinattieri


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
441 KB
Volume
5
Category
Article
ISSN
0749-6036

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We have measured the photoluminescence (PL) spectra of GaAs/GaInP single quantum wells at pressure up to %5 GPa, and investigated the characteristics of the 1.46 eV deep emission band. It has a very long decay time of several hundred nanoseconds. In addition, unlike the emission from the GaAs well,