Time-Resolved Amplified Spontaneous Emission in InAs/GaAs Quantum Dots

✍ Scribed by C. Lingk; G. von Plessen; J. Feldmann; K. Stock; M. Arzberger; G. Böhm; M.-C. Amann; G. Abstreiter

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 110 KB
• Volume: 224
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200103)224:2<475::aid-pssb475>3.0.co;2-b

✦ Synopsis

In this paper, we investigate the dynamics of amplified spontaneous emission (ASE) in self-assembled InAs/GaAs quantum dots. Upconversion is used to time-resolve the emission from an edge-emitting waveguide structure at room temperature which is excited by short laser pulses in a stripe geometry. We demonstrate that increases in both the electron-hole pair density and the stripe length significantly decrease the emission decay time from around 2 ns, corresponding to spontaneous emission, to about 0.9 ns, corresponding to stimulated emission or ASE. A simulation of the ASE process in this geometry is in agreement with our experimental results.