Time of flight study of high performance CVD diamond detector devices

✍ Scribed by Tranchant, N. ;Nesladek, M. ;Tromson, D. ;Remes, Z. ;Bogdan, A. ;Bergonzo, P.

• Book ID: 105364636
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 355 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200776342

✦ Synopsis

Abstract

In comparison with polycrystalline diamond, single crystal diamond (SC CVD) offers important advantages for applications to electronics and detection. This is because SC CVD diamond exhibits improved charge transport characteristics, specifically a high drift mobility and an increased charge carrier lifetime. So far, only limited studies have dealt with the measurements of electrical transport parameters in SC diamond and majority of these studies were based on industrial material only. In our study we have investigated the electrical transport properties of PE CVD SC diamond grown using relatively high pressure growth conditions and high deposition growth rates (typically 20 μm/hour) by two independent methods: the laser Time‐of‐Flight (TOF) and the alpha particle TOF techniques. Raman spectroscopy, defect spectroscopy were used to characterize the quality of the samples prepared. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)