Time dependent dielectric breakdown (TDDB) characteristics of metal–oxide–semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

✍ Scribed by Hsu, H.W.; Huang, H.S.; Chen, H.W.; Cheng, C.P.; Lin, K.C.; Chen, S.Y.; Wang, M.C.; Liu, C.H.

• Book ID: 118062304
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 541 KB
• Volume: 77
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2012.05.026