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Tilted angle implantations of B, Al and Ga in single crystalline Si

✍ Scribed by E.H.A. Dekempeneer; P.C. Zalm; C.J. Vriezema; J. Politiek; H.J. Ligthart

Book ID
113280101
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
631 KB
Volume
42
Category
Article
ISSN
0168-583X

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Implantation of single crystalline iron
Implantation of single crystalline iron garnet thin films with He+, B+, and Si+ ions
✍ Ostafiychuk, B. K. ;Fedoriv, V. D. ;Yaremiy, I. P. ;Garpul, O. Z. ;Kurovets, V. πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 415 KB

## Abstract The mechanisms of defect formation in single crystalline epitaxial iron garnet thin films implanted with intermediate energy He^+^, B^+^, and Si^+^ ions have been investigated. X‐ray diffraction and modeling of the implantation process are used to show the effectiveness of defect format