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Threshold voltage spread in flash memories under a constant ΔQ erasing scheme

✍ Scribed by Andrea Chimenton; Paolo Pellati; Piero Olivo


Book ID
104305628
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
254 KB
Volume
59
Category
Article
ISSN
0167-9317

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✦ Synopsis


This paper presents a new erasing scheme for Flash memories characterized by a constant charge injected by each pulse. An analytical expression for the erased threshold voltage as a function of electrical, technological and physical parameters shows their impact on the erased threshold distribution spread. The dynamics of threshold distributions of entire memory sectors is analyzed and the attention is focused on its independence of the initial threshold voltage and on the creation and evolution of the distribution spread.