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Threshold voltage shift of submicron p-channel MOSFET due to Si surface damage from plasma etching process

✍ Scribed by Gwan-Ha Kim; Young-Rog Kang; Whan-Jun Kim; Sang-Yong Kim; Chang-Il Kim


Book ID
108289505
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
750 KB
Volume
515
Category
Article
ISSN
0040-6090

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