✦ LIBER ✦
Threshold voltage fluctuations induced by statistical ‘position’ and ‘number’ impurity fluctuations in bulk MOSFETs
✍ Scribed by Yuri Yasuda; Makoto Takamiya; Toshiro Hiramoto
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 146 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
Threshold voltage (V th ) fluctuations due to the statistical impurity fluctuations in bulk MOSFETs are successfully separated into the impurity 'number' fluctuations and impurity 'position' distribution, and the mechanism of V th fluctuations in bulk MOSFETs is investigated by comparing bulk MOSFETs with fully depleted (FD) SOI MOSFET by means of 2D simulation. It is found that the bulk MOSFET has smaller V th fluctuations due to selfcompensation mechanism of impurity 'number' fluctuations, while the self-compensation of impurity 'position' distribution is negligible.