Threshold for photoelectric emission from a quantum ring of narrow-gap semiconductor

✍ Scribed by N.R. Das; Susmita Sen

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 432 KB
• Volume: 403
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2008.06.025

✦ Synopsis

In this paper, we have investigated the threshold energy required for photoelectric emission of electrons from a torroidal quantum ring of degenerate narrow-gap semiconductor. Current density due to electrons emitted from the ring illuminated by normal radiation has been calculated considering the effect of band non-parabolicity of the narrow-gap semiconductor. The computed results show that the current density increases in a staircase manner with the increase of incident photon energy. The band non-parabolicity causes the increase in threshold energy for photoelectric emission of electrons. The photoemission becomes an oscillatory function of the cross-sectional radius of the ring, and may serve as an important tool for estimating parameters like cross-sectional radius, doping density and band non-parabolicity.