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Threshold field of phase change memory materials measured using phase change bridge devices

✍ Scribed by Krebs, Daniel; Raoux, Simone; Rettner, Charles T.; Burr, Geoffrey W.; Salinga, Martin; Wuttig, Matthias

Book ID: 120000179
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 451 KB
Volume: 95
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3210792

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## Abstract Phase‐change (PC) materials are being developed for a new non‐volatile electronic‐memory technology to replace flash memory. Fast, reversible transformations between amorphous and crystalline states (with different electrical resistivities, thereby encoding bits of information) are prod