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Threshold energy of formation of an oxygen vacancy defect in SiO2 by atomic displacements using molecular dynamics

✍ Scribed by F. Mota; M.-J. Caturla; J.M. Perlado; E. Dominguez; A. Kubota

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Interatomic Potentials and Simulation of

✍ Gehlen, Pierre C.; Beeler, Joe R.; Jaffee, Robert I. 📂 Article 📅 1972 🏛 Springer US ⚖ 975 KB

Interaction with charge carriers and the

✍ A. E. Patrakov; V. A. Gritsenko; G. M. Zhidomirov 📂 Article 📅 2004 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 179 KB