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Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb

✍ Scribed by G. E. Cirlin; V. G. Dubrovskii; A. A. Tonkikh; N. V. Sibirev; V. M. Ustinov; P. Werner


Book ID
110141937
Publisher
Springer
Year
2005
Tongue
English
Weight
275 KB
Volume
39
Category
Article
ISSN
1063-7826

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In situ transmission electron microscopy
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The in situ transmission electron microscope allows us to visualise processes occurring at surfaces and interfaces in real time and is therefore capable of providing detailed, quantitative information about reaction mechanisms. We have used a UHV TEM equipped with in situ growth capabilities to stud