Three-dimensional model calculation of epitaxial growth by Monte Carlo simulation
β Scribed by M. Tagwerker; W.M. Plotz; H. Sitter
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 326 KB
- Volume
- 146
- Category
- Article
- ISSN
- 0022-0248
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## Abstract We present a threeβdimensional (3D) semiβclassical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used twoβdimensional (2D) models. The advantages of our model, in terms of accu
A three-dimensional model ~ zeolite structures b de~ribed. The calculation of diffmivities as β’ function or" temperature and intracrysudline concagmion taking into acommt mrbete/sodmte intemctiom is baaed on the Monte Carlo meflmd. Without a fitting parameter the diffusivities calculated in filioali