The behaviors of nitrogen during Czochralski (CZ) silicon crystal growth have been investigated in this paper. It is found that the nitrogen impurities in silicon mainly exist as nitrogen pair and nitrogen-oxygen complex. The nitrogen concentration can be exactly determined by Fourier transformed in
β¦ LIBER β¦
Three-dimensional calculations of facets during Czochralski crystal growth
β Scribed by Oleg Weinstein; Wolfram Miller
- Book ID
- 108166031
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 905 KB
- Volume
- 312
- Category
- Article
- ISSN
- 0022-0248
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## Abstract The effects of several growth parameters in cylindrical and spherical Czochralski crystal process are studied numerically and particularly, we focus on the influence of the pressure field. We present a set of threeβdimensional computational simulations using the finite volume package Fl
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