Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray Topography

Observation of individual dislocations i

Observation of individual dislocations in 6H and 4H SiC by means of back-reflection methods of X-ray diffraction topography

✍ W. Wierzchowski; K. Wieteska; T. Balcer; A. Malinowska; W. Graeff; W. Hofman 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 210 KB

## Abstract SiC crystals of high structural perfection were investigated with several methods of X‐ray diffraction topography in Bragg‐case geometry. The methods included section and projection synchrotron white beam topography and monochromatic beam topography. The investigated 6H and 4H samples c