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have been awarded an ESPRIT II programme involving the manufacturing technology by large scale Metallorganic Vapour Phase Epitaxy (MOVPE) of lII-V materials for high speed electronic and optoelectronic devices. The companies are cooperating in this programme with other leading research institutes on the basis of the planetary MOVPE multiwafer production reactor originally invented by LEP and now licensed and manufactured by Aixtron.
The applications are in the field of high speed signal processing and high frequency satellite broadcasting, as well as semiconductor lasers. The programme will involve GaAs/GaAIAs, GalnAs, GaInAIP and InGaAsP heterostructures. The optimum synergy is expected to be achieved between partners who are specialists in MOVPE equipment (hardware and gas flow simulation software) on one hand and on the other, users of equipment for a large range of applications such as high speed microelectronics on GaAs and InP, lasers on GaAs and guided optics in lnP.
• For fi~rther information, contact: Aixtron GmbH,
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