Several factors must be taken into account when deciding which specimen preparation technique(s) to use. These factors include the amount of material available, ease of preparing this material due to its properties and familiarity, location and size of the region of interest, amount of information s
Thin overlayer influence on electrophysical properties of nickel films
โ Scribed by T. Hovorun; A. Chornous
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 263 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0232-1300
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โฆ Synopsis
In this work it is experimentally investigated a size effect in temperature coefficient of resistance (ะขCR) of Ni films with Cu and SiO 2 thin overlayer. The parameters of electrical transfer (the mean-free path of electron, the reflectivity coefficient of the external surfaces, the reflection and transmission coefficients at the grain boundary) were calculations. Decreasing of the value of the reflectivity coefficient is due to the change of the surface microrelief. It is show that the value of TCR decreases caused by the conditions of scattering changes on internal and external boundaries.
๐ SIMILAR VOLUMES
Sb 2 S 3 thin films are obtained by evaporating of Sb 2 S 3 powder onto glass substrates maintained at room temperature under pressure of 2ร10 -5 torr. The composition of the thin films was determined by energy dispersive analysis of X-ray (EDAX). The effect of thermal annealing in vacuum on the str
## Abstract Transparent Zinc Oxide (ZnO) thin films have been grown on Si (100) and Sapphire (0001) substrates by RF magnetron sputtering for different growth time intervals (10, 30 and 60 min) to study the substrate and thickness effects. All the films have been grown at a substrate temperature of