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Thin film silicon devices deposited at 100 °C: A study on the structural order of the photoactive layer

✍ Scribed by J.K. Rath; R.E.I. Schropp; Pere Roca i Cabarocas; F.D. Tichelaar


Book ID
116671021
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
375 KB
Volume
354
Category
Article
ISSN
0022-3093

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