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Thin-film PZT/SiC structure on silicon substrate: Formation, structural features, and dielectric properties

✍ Scribed by I. P. Pronin; E. Yu. Kaptelov; S. V. Senkevich; V. A. Klimov; N. A. Feoktistov; A. V. Osipov; S. A. Kukushkin

Book ID
111450172
Publisher
SP MAIK Nauka/Interperiodica
Year
2008
Tongue
English
Weight
191 KB
Volume
34
Category
Article
ISSN
1063-7850

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Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi