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Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

✍ Scribed by Zhang, Baijun; Egawa, Takashi; Ishikawa, Hiroyasu; Liu, Yang; Jimbo, Takashi


Book ID
121761746
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
556 KB
Volume
86
Category
Article
ISSN
0003-6951

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