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Thickness Dependent Loss Function of Si with 0.14 eV Energy Resolution

✍ Scribed by M. Stöger-Pollach; C. Hebert; H.W. Zandbergen; P. Schattschneider


Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
291 KB
Volume
6
Category
Article
ISSN
1438-1656

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✦ Synopsis


Si band gap spectra were recorded by using electron energy loss spectrometry with very high energy resolution of 0.14 eV using a transmission electron microscope with a monochromated electron source. The shape of the spectra change with thickness, becoming indistinct at very thin regions. But even for higher thicknesses structureal evolution of the spectra can be observed. A comparison with band structure calculations is given, too.