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Thickness dependence of boron penetration through O2 and N2O-grown gate oxides and its impact on threshold voltage variation
✍ Scribed by Krisch, K.S.; Green, M.L.; Baumann, F.H.; Brasen, D.; Feldman, L.C.; Manchanda, L.
- Book ID
- 111683787
- Publisher
- IEEE
- Year
- 1996
- Tongue
- English
- Weight
- 997 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0018-9383
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