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Thick GaN Growth on GaAs(111) Substratres at 1000 °C with HVPE

✍ Scribed by Hasegawa, F. ;Minami, M. ;Sunaba, K. ;Suemasu, T.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
218 KB
Volume
176
Category
Article
ISSN
0031-8965

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