✦ LIBER ✦

Thick (∼ 50 μm) amorphous silicon p-i-n diodes for direct detection of minimum ionizing particles

✍ Scribed by W.S. Hong; J.S. Drewery; T. Jing; H. Lee; S.N. Kaplan; A. Mireshghi; V. Perez-Mendez

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 882 KB
Volume: 365
Category: Article
ISSN: 0168-9002
DOI: 10.1016/0168-9002(95)00410-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of 13 and 30 μm th

Characterization of 13 and 30 μm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

✍ M. Despeisse; G. Anelli; S. Commichau; G. Dissertori; A. Garrigos; P. Jarron; C. 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 245 KB

A study for the detection of ionizing pa

A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates

✍ G. Batignani; C. Angelini; M.G. Bisogni; M. Boscardin; S. Bettarini; M. Bondioli 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 316 KB

We report on bipolar NPN phototransistors fabricated at ITC-IRST on thick high-resistivity silicon substrates. The phototransistor emitter is composed of a phosphorus n+ implant, the base is a diffused high-energy boron implant, and the collector is the 600-800 mm thick silicon bulk, contacted on th