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Thermomigration of tellurium precipitates in CdZnTe crystals grown by vertical bridgman method

✍ Scribed by T. S. Lee; J. W. Park; Y. T. Jeoung; H. K. Kim; C. H. Chun; J. M. Kim; I. H. Park; J. M. Chang; S. U. Kim; M. J. Park

Book ID
112812642
Publisher
Springer US
Year
1995
Tongue
English
Weight
595 KB
Volume
24
Category
Article
ISSN
0361-5235

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## Abstract ZnO crystals grown by the vertical Bridgman technique were comprehensively characterized in view of the impurities and intrinsic defects in the material. It is shown that residual Al is the cause of the residual n‐type conductivity and intrinsic defects play only a minor role in the sam