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Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF-PVT Process

✍ Scribed by D. Chaussende; E. Blanquet; F. Baillet; M. Ucar; G. Chichignoud

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
398 KB
Volume
12
Category
Article
ISSN
0948-1907

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✦ Synopsis

Abstract

The main trends that govern the continuous‐feed physical vapor transport (PVT), bulk‐crystal‐growth process is investigated experimentally, together with thermodynamic and computation fluid dynamics (CFD) calculations. Several chemical systems are considered. An analysis of the chemistry of every successive step (CVD, transfer, and PVT) is presented first. The effects of hydrogen and chlorine are then investigated. Then, the interaction between the different steps is discussed. The strong chemical interaction which exists between the CVD and the PVT zones is demonstrated to require the consideration of the whole process and not the two zones separately.

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