Thermo- and galvanomagnetic technique for semiconductors testing at high pressure up to 30 GPa
✍ Scribed by Sergey V Ovsyannikov; Vladimir V Shchennikov
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 112 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
✦ Synopsis
The thermoelectric power (S), magnetoresistance (MR) and thermomagnetic (TM) e ects were measured at high pressure (P) in the vicinity of semiconductor-metal phase transitions for Te, Se and S micro-samples. From longitudinal and transverse Nernst-Ettingshausen (N-E) e ects for Te and Se, the scattering parameter (r) of holes was estimated and under the closing of semiconductor gap (Eg) the decreasing of their e ective mass (m) was found. S of Sulphur also decreased with pressure up to 40 GPa and the negative MR e ect observed indicates low mobility ( ) of holes. The technique developed seems to be suitable for use in micro-device technology.