Thermally stimulated current (TSC) measurements were used to study thin film CdSe, which was prepared by electrochemical deposition from aqueous solutions containing the selenosulfate ion. Samples, which were usually about 1 gm thick, were prepared for electrical measurements by removal of part of the CdSe film from the conductive ITO substrate with a non-shrink epoxy. The use of several contacts (colloidal graphite paint, InGa eutectic and silver print) and four probe measurements indicated that electrical contacts were not important factors in the TSC measurements. The temperature dependence of the clark resistivity indicates that the impurity conduction does not make an important contribution to the TSC of this film. In addition, this mechanism was precluded by the effects of the applied voltage. At the largest applied field, there was no evidence of saturation of the TSC intensity, indicating that recombination of carriers was competitive with collection for all applied fields. Not all films exhibited TSC. TSC was easily detected for samples with a room temperature resistivity in the 102-105 11 cm range. For these samples, the dark currents were the same order of magnitude as the thermally stimulated currents only for temperatures higher than -30Β°C. The TSC spectrum in the region of -150 Β° to -40"C consisted of one broad peak. Both partial heating and isothermal decay experiments indicated that the TSC peak was a composite of several component peaks each having a peak shape consistent with first order kinetics, indicating the presence of several subband gap states. To deconvolute this single composite peak into its component peaks, partial heating was used to sequentially release carriers trapped in shallower subband gap states. There was also evidence for shallower traps that have TSC response at temperatures lower than those accessible by the present apparatus.