Thermally stable Ir/n-ZnO Schottky diodes

✍ Scribed by S.J. Young; S.J. Chang; L.W. Ji; T.H. Meen; C.H. Hsiao; K.W. Liu; K.J. Chen; Z.S. Hu

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 339 KB
• Volume: 88
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2010.09.010

✦ Synopsis

Temperature-dependent characteristics of ZnO Schottky diodes with Iridium (Ir) contact electrodes were investigated. Using Norde model, it was found that the effectively Schottky barrier heights of Ir on n-ZnO were around 0.837, 0.829, 0.801, 0.750 and 0.719 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. Using Cheung's method, it was found that Schottky barrier heights between Ir and the n-ZnO were 0.824, 0.823, 0.789, 0.743 and 0.740 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. The large Schottky barrier heights suggest that Ir is a potentially useful material for ZnO-based ultraviolet Schottky barrier photodetectors and metal-semiconductor-metal photodetectors.